A novel role for SiCN to suppress H2O outgas from TEOS oxide films in hybrid bonding

Authors :: Masakazu Hamada
Tetsuya Ueda
Yasunori Morinaga
H. Yano
K. Ichinose
M. Tetani
M. Takeuchi
Susumu Matsumoto
S. Uya
N. Sato
Source :: 2017 IEEE International Interconnect Technology Conference (IITC).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: The novel use of SiCN underneath TEOS oxide as a bonding surface in the wafer bonding of Backside-illuminated (BSI) sensor is proposed and the mechanism of void control by SiCN is clarified. In general, high-temperature processing results in generating voids between the wafer interfaces after bonding due to the release of high-pressure H 2 O contained in TEOS. In the proposed mechanism, the SiCN exposed to high-temperature H 2 O is oxidized thereby preventing the emission of high-pressure H 2 O gas. This paper analyzes the role of SiCN in this mechanism.

Subjects :: Void (astronomy)
Materials science
Silicon
Wafer bonding
Annealing (metallurgy)
Oxide
chemistry.chemical_element
chemistry.chemical_compound
Outgassing
chemistry
Chemical engineering
Anodic bonding
Wafer
Composite material

Database :: OpenAIRE
Journal :: 2017 IEEE International Interconnect Technology Conference (IITC)
Accession number :: edsair.doi...........6c6ba89e24fd003025512e3277395a37
Full Text :: https://doi.org/10.1109/iitc-amc.2017.7968945

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