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Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
- Source :
- Nano Letters. 17:4781-4786
- Publication Year :
- 2017
- Publisher :
- American Chemical Society (ACS), 2017.
-
Abstract
- Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov–de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.
- Subjects :
- Condensed matter physics
Band gap
Chemistry
Mechanical Engineering
Schottky barrier
Contact resistance
Bioengineering
02 engineering and technology
General Chemistry
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
symbols.namesake
Monolayer
symbols
General Materials Science
Work function
van der Waals force
0210 nano-technology
Ohmic contact
Quantum tunnelling
Subjects
Details
- ISSN :
- 15306992 and 15306984
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Nano Letters
- Accession number :
- edsair.doi...........6cdcebaa214c9ecc9aa073fa354ddcc8