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Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory
- Source :
- IEEE Transactions on Electron Devices. 64:3647-3653
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- A versatile multiphysics simulation packet for investigating different resistive random acces memories (RRAMs) is developed in this paper. Heat transfer, electrical conduction, and ion migration in such heterogeneous structure are all taken into consideration. Three fully coupled partial differential equations are solved using our self-developed finite-difference algorithm, where Scharfetter–Gummel method is adopted to simulate ion migration with fast convergence achieved. This packet is validated in comparison with the commercial software based on the finite-element method. With its implementation, complete and clear pictures for crosstalk effect in vertically integrated RRAM are captured and compared, where the effects of key physical and geometrical factors are characterized and understood. Some useful suggestions to mitigate its unfavorable influences are given.
- Subjects :
- 010302 applied physics
Resistive touchscreen
Commercial software
Partial differential equation
Computer science
Network packet
Multiphysics
Finite difference
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
Resistive random-access memory
0103 physical sciences
Heat transfer
Electronic engineering
Electrical and Electronic Engineering
0210 nano-technology
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........6d8ceba96e86edb4bb632da404dda83f