EXPERIMENTAL CALIBRATION OF SEMICONDUCTOR DETECTOR PULSE-HEIGHT RESPONSE TO PROTONS

Significant progress has been made toward accomplishing measurement of the energy absorbed from a proton as a function of the path length of the proton in the sensitive volume of a semiconductor detector. Surface barrier P- N and P-i-N detectors were used in the study utilizing path lengths as short as 100 microns and as long as 10 cm. Protons of initial energy of 16, 40, and 187 mev were used. Other proton energies (8 to 166 mev) were obtained by using absorbers in the proton beam. Energy calibrations were accomplished by total absorption of protons of known energy.