Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Catalytic MoSx thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoSx deposition conditions were controlled to obtain 8-10 nm films directly on p-GaInP2 substrates without ancillary protective layers. The films were nominally composed of MoS2, with additional MoOxSy and MoO3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the hydrogen evolution reaction relative to bare p-GaInP2. Notably, no appreciable photocurrent reduction was incurred by the addition of the photoelectrodeposited MoSx catalyst to the GaInP2 photocathode under light-limited operating conditions, highlighting the advantageous optical properties of the film. The MoSx catalyst also imparted enhanced durability toward photoelectrochemical hydrogen evolution in acidic conditions, maintaining nearly 85% of the initial photocurrent after 50 h of electrolysis. In total, this work demonstrates a simple method for producing dual-function catalyst/protective layers directly on high-performance, planar III-V photoelectrodes for photoelectrochemical energy conversion.