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III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector
- Source :
- IEEE Sensors Journal. 8:724-729
- Publication Year :
- 2008
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2008.
-
Abstract
- We report on the fabrication and characterization of Ill-nitride layered tunnel barriers with applications for a new type of tunable hyperspectral imaging detector with intrinsically hyperspectral pixels. This would enable each pixel to be individually tunable in real-time through a range of wavelengths, with the number and width of spectral channels being dynamically adjustable. Shape-engineered electron barriers fabricated from III-nitride heterostructures allow barrier height to be varied by application of a voltage. A spectroscopy of photon wavelength is enabled via the collection of photoexcited electrons across this barrier. The device is envisioned for tunable detection of ultraviolet through infrared wavelengths.
Details
- ISSN :
- 1530437X
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- IEEE Sensors Journal
- Accession number :
- edsair.doi...........6e55f98dd8aa76daaeeca19fe0b7f58a