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III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector

Authors :
Fatemeh Shahedipour-Sandvik
J. R. Grandusky
Vibhu Jindal
Neeraj Tripathi
L. D. Bell
Source :
IEEE Sensors Journal. 8:724-729
Publication Year :
2008
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2008.

Abstract

We report on the fabrication and characterization of Ill-nitride layered tunnel barriers with applications for a new type of tunable hyperspectral imaging detector with intrinsically hyperspectral pixels. This would enable each pixel to be individually tunable in real-time through a range of wavelengths, with the number and width of spectral channels being dynamically adjustable. Shape-engineered electron barriers fabricated from III-nitride heterostructures allow barrier height to be varied by application of a voltage. A spectroscopy of photon wavelength is enabled via the collection of photoexcited electrons across this barrier. The device is envisioned for tunable detection of ultraviolet through infrared wavelengths.

Details

ISSN :
1530437X
Volume :
8
Database :
OpenAIRE
Journal :
IEEE Sensors Journal
Accession number :
edsair.doi...........6e55f98dd8aa76daaeeca19fe0b7f58a