AuAl compound formation by thin film interactions

The AuAl compound was obtained by low temperature (190–250°C) heat treatment of a thin gold and aluminium film. The compound was identified by X-ray diffraction and its thickness was measured by 4He MeV ion backscattering. The AuAl layer grows at a fixed temperature as a function of (time)12. The activation energy of the growth compound is 1.2 eV. This compound is stable up to the maximum investigated temperature (≈500°C).