Initial stages of InN thin film growth onto MgAl2O4(1 1 1) and α-Al2O3(0 0·1) substrates

The initial growth stage of InN on both α-Al 2 O 3 (0 0·1) and MgAl 2 O 4 (1 1 1) substrates has been investigated. Both the reflection high-energy electron diffraction (RHEED) and the atomic force microscope (AFM) measurements indicated that the growth of InN on α-Al 2 O 3 (0 0·1) was three-dimensional, but was two-dimensional on MgAl 2 O 4 (1 1 1).