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Temperature Dependence of 1.2kV 4H-SiC Schottky Barrier Diode for Wide Temperature Applications
- Source :
- 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- The robustness of 4H-SiC Schottky barrier diode (SBD) operating under extreme temperature conditions has become a critical issue for cryogenic and high temperature power conversion application. In this paper, the temperature dependence of static and dynamic performance for 1.2 kV 4HSiC SBD is systematically characterized over temperature range of 90 K to 478 K. Firstly, the forward characteristics (reverse characteristics) are characterized to evaluate the forward onstate performance (leakage current and block voltage) over above temperature range. Secondly, the reverse junction capacitance characterization is conducted to evaluate the capacitance stored energy during switching process. Moreover, a double pulse test circuit with layout optimization is used to characterize the reverse recovery performance, focusing on three key performance parameters (including reverse recovery peak current, reverse recovery charge and switching energy loss related with reverse recovery). The characterization results indicate the cryogenic temperature condition is more conducive to present the advantages of SiC SBD in high frequency power conversion system with high conversion efficiency
- Subjects :
- Materials science
business.industry
020208 electrical & electronic engineering
Energy conversion efficiency
Schottky diode
02 engineering and technology
Atmospheric temperature range
Capacitance
Diffusion capacitance
Robustness (computer science)
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
business
Cryogenic temperature
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
- Accession number :
- edsair.doi...........6ed3811482b4edf5e54a8d234b80a934