Back to Search
Start Over
Annealing studies of Be-implanted GaAs0.6P0.4
- Source :
- Journal of Electronic Materials. 7:547-558
- Publication Year :
- 1978
- Publisher :
- Springer Science and Business Media LLC, 1978.
-
Abstract
- Differential resistivity and Hall effect measurements and secondary ion mass spectrometry (SIMS) are used to study the annealing behavior of Be-implanted GaAs0.6P0.4. Results similar to that previously reported for Be-implanted GaAs are observed, including outdiffusion of Be into the Si3N4 encapsulant during 900‡C annealing of high dose implants. Nearly all (85–100%) of the Be remaining after a 900‡C, 1/2 hr anneal is electrically active. However, the electrical activation at low annealing temperatures (600–700‡C) is much lower in GaAs0.6P0.4 than in GaAs. A substantial amount of diffusion is observed even for the low fluence Be implants in GaAs0.6P0.4 annealed at 900‡C, indicating a greater dependence of the diffusion on defect-related effects in the ternary.
- Subjects :
- Materials science
Low fluence
Solid-state physics
Annealing (metallurgy)
Analytical chemistry
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Secondary ion mass spectrometry
Ion implantation
Hall effect
Electrical resistivity and conductivity
Materials Chemistry
Electrical and Electronic Engineering
Ternary operation
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........6eeab5f1c8495ea49b9c5140597bee30