Bismuth‐doped Cu(In,Ga)Se 2 absorber prepared by multi‐layer precursor method and its solar cell

Bismuth (Bi)-doped Cu(In,Ga)Se2 (CIGS) films were prepared by the so-called “multi-layer precursor method”, obtained by depositing them onto Bi layers with various thicknesses on Mo-coated soda-lime glass (SLG) substrates. Material composition (Cu, In, Ga, and Se) profiles of the CIGS films are almost identical, whereas sodium (Na) is reduced, when Bi thickness is increased. Moreover, the incorporation of Bi into the CIGS film is enhanced with thicker Bi layer. With Bi thickness from 0 to 70 nm, the 2.4-μm-thick CIGS absorbers demonstrate the increase in CIGS grain size, carrier lifetime, and carrier concentration, thus improving their cell performances, especially open-circuit voltage (VOC). With further increase in Bi thickness of above 70 nm, the CIGS films show the deterioration of CIGS film quality owing to the formation of Bi compounds such as Bi, BiSe, and Bi4Se3. Consequently, Bi-doped CIGS absorber with thickness of 2.4 μm, prepared with the 70-nm-thick Bi layer on Mo-coated SLG substrate, gives rise to the improvement of photovoltaic performances, especially VOC. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)