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Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
- Source :
- Journal of Crystal Growth. 368:92-96
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- Highly c -axis oriented GaN films were deposited on Cu coated glass substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). In-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to systematically analyze the influence of TMGa flux on the crystalline quality of the GaN films. GaN films with strong c -axis preferred orientation were achieved under the optimal TMGa flux of 1.4 sccm. Moreover, a strong near band edge (NBE) emission peak located at 354 nm was observed in the room temperature PL spectrum for the optimized GaN sample. The GaN/Cu/glass structure shows great potential for application in large area low cost GaN-based LED devices.
- Subjects :
- Diffraction
Reflection high-energy electron diffraction
Materials science
Analytical chemistry
Chemical vapor deposition
Plasma
Condensed Matter Physics
Electron cyclotron resonance
Inorganic Chemistry
Metal
Reflection (mathematics)
Electron diffraction
visual_art
Materials Chemistry
visual_art.visual_art_medium
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 368
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........6ff855b7bf149d6d371187318016a959