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An electrical test method for quality detecting of wafer level eutectic bonding
- Source :
- Journal of Micromechanics and Microengineering. 27:015028
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- As the costs of packaging and testing account for a substantial portion of microelectromechanical system (MEMS) devices, an effective and convenient characterization method is urgent to be investigated to lower the cost. In this paper, an electrical test method was utilized, and the test key used for a four-probe current-voltage test was designed to monitor the quality of the AuSn eutectic bonding. The electrical test can directly detect whether or not voids existed in the bonding layer. The difference in alloy state, for example, the existence of the (Au, Ni) 3Sn2 phase confirmed by the scanning electron microscope and energy dispersive x-ray spectroscopy test, can also be reflected by resistivity variation. The electrical test can be implemented automatically and conveniently unlike other characterization methods. Therefore, it is suitable to be applied in quality inspection in industrial production.
- Subjects :
- 010302 applied physics
Microelectromechanical systems
Materials science
business.industry
Scanning electron microscope
Mechanical Engineering
Alloy
02 engineering and technology
Test method
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
Characterization (materials science)
Mechanics of Materials
Electrical resistivity and conductivity
0103 physical sciences
Electronic engineering
Eutectic bonding
engineering
Optoelectronics
Wafer
Electrical and Electronic Engineering
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616439 and 09601317
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Journal of Micromechanics and Microengineering
- Accession number :
- edsair.doi...........7095cbc721ad2acb61fe23b4bd49d9ac