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Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
- Source :
- ECS Journal of Solid State Science and Technology. 4:N99-N102
- Publication Year :
- 2015
- Publisher :
- The Electrochemical Society, 2015.
Details
- ISSN :
- 21628777 and 21628769
- Volume :
- 4
- Database :
- OpenAIRE
- Journal :
- ECS Journal of Solid State Science and Technology
- Accession number :
- edsair.doi...........70b4f750779f420a69c0630f6faf3ece