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Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors

Authors :
Paul Heremans
Guido Groeseneken
Ajay Bhoolokam
Soeren Steudel
Jan Genoe
Manoj Nag
Source :
ECS Journal of Solid State Science and Technology. 4:N99-N102
Publication Year :
2015
Publisher :
The Electrochemical Society, 2015.

Details

ISSN :
21628777 and 21628769
Volume :
4
Database :
OpenAIRE
Journal :
ECS Journal of Solid State Science and Technology
Accession number :
edsair.doi...........70b4f750779f420a69c0630f6faf3ece