Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric

MLA

Ingram Yin-Ku Chang, et al. “Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric.” Japanese Journal of Applied Physics, vol. 48, May 2009, p. 05DA02. EBSCOhost, https://doi.org/10.1143/jjap.48.05da02.

APA

Ingram Yin-Ku Chang, Cheng-Li Lin, Shin-chun Ju, Main-gwo Chen, Jong-Hong Lu, Chuan-Hsi Liu, & Pi-Chun Juan. (2009). Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric. Japanese Journal of Applied Physics, 48, 05DA02. https://doi.org/10.1143/jjap.48.05da02

Chicago

Ingram Yin-Ku Chang, Cheng-Li Lin, Shin-chun Ju, Main-gwo Chen, Jong-Hong Lu, Chuan-Hsi Liu, and Pi-Chun Juan. 2009. “Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric.” Japanese Journal of Applied Physics 48 (May): 05DA02. doi:10.1143/jjap.48.05da02.