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Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform

Authors :
Qingyun Xie
Mengyang Yuan
John Niroula
James A. Greer
Nitul S. Rajput
Nadim Chowdhury
Tomas Palacios
Source :
2022 International Electron Devices Meeting (IEDM).
Publication Year :
2022
Publisher :
IEEE, 2022.

Details

Database :
OpenAIRE
Journal :
2022 International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........70ded917425a1e9ae58aab15b7bcb1ac

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