Ballistic transport in 5.1 nm monolayer boron phosphide transistors for high-performance applications

MLA

Yu Wang, et al. “Ballistic Transport in 5.1 Nm Monolayer Boron Phosphide Transistors for High-Performance Applications.” Current Applied Physics, vol. 52, Aug. 2023, pp. 85–93. EBSCOhost, https://doi.org/10.1016/j.cap.2023.05.012.

APA

Yu Wang, Wen Chen, Sicheng Jing, Jinghua Pan, Danni Wang, Zelong Ma, & Baoan Bian. (2023). Ballistic transport in 5.1 nm monolayer boron phosphide transistors for high-performance applications. Current Applied Physics, 52, 85–93. https://doi.org/10.1016/j.cap.2023.05.012

Chicago

Yu Wang, Wen Chen, Sicheng Jing, Jinghua Pan, Danni Wang, Zelong Ma, and Baoan Bian. 2023. “Ballistic Transport in 5.1 Nm Monolayer Boron Phosphide Transistors for High-Performance Applications.” Current Applied Physics 52 (August): 85–93. doi:10.1016/j.cap.2023.05.012.