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Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane
- Source :
- Crystallography Reports. 58:1023-1029
- Publication Year :
- 2013
- Publisher :
- Pleiades Publishing Ltd, 2013.
-
Abstract
- The electric and structural characteristics of silicon-doped GaN and Al0.3Ga0.7N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 1020 cm−3 with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al0.3Ga0.7N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 1019 cm−3. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al0.3Ga0.7N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.
- Subjects :
- Materials science
Silanes
Silicon
Doping
Analytical chemistry
chemistry.chemical_element
General Chemistry
Condensed Matter Physics
Epitaxy
Crystallographic defect
Silane
chemistry.chemical_compound
symbols.namesake
chemistry
symbols
General Materials Science
Raman spectroscopy
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 1562689X and 10637745
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Crystallography Reports
- Accession number :
- edsair.doi...........719e3de809478d1a43f0c20787c0abf9