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A Buried-Channel WNx/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System

Authors :
Mayumi Hirose
Yoshiko Ikeda
Masami Nagaoka
Atsushi Kameyama
Kazuya Nishihori
Yoshiaki Kitaura
Misao Yoshimura
Masakatsu Mihara
Naotaka Uchitomi
Yoshikazu Tanabe
Source :
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Publication Year :
1995
Publisher :
The Japan Society of Applied Physics, 1995.

Subjects

Subjects :
Front and back ends
Single chip
Materials science
business.industry
Electrical engineering
MESFET
business
Personal Handy-phone System
Electrical efficiency
Monolithic microwave integrated circuit
Communication channel
Low noise

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........71b0fceb7be5f52bfc9fd30c60b58573
Full Text :
https://doi.org/10.7567/ssdm.1995.d-6-3
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