Electromagnetic crosstalk characteristics of micron parallel interconnects

In the paper, the model of micron-level crosstalk interconnections was constructed based on FR4 substrate. By changing the input variables of the length and the spacing, this prediction model could provide useful information for Crosstalk intensity. With the increase of the length of the interconnect, the crosstalk intensity of the proximal end and the distal end increased. When the interconnect spacing increased, the trend of crosstalk was not changed, but the intensity decreased gradually. Which provided an experimental reference for future methods of reducing crosstalk from the perspective of physical structure.