Back to Search Start Over

Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

Authors :
M. S. Aksenov
N. A. Valisheva
D. V. Gorshkov
G. Y. Sidorov
I. P. Prosvirin
A. K. Gutakovskii
Source :
Journal of Applied Physics. 131:085301
Publication Year :
2022
Publisher :
AIP Publishing, 2022.

Abstract

The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3–4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV−1 cm−2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C.

Subjects

Subjects :
General Physics and Astronomy

Details

ISSN :
10897550 and 00218979
Volume :
131
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........720525b474e31d30829bb12019cdd938
Full Text :
https://doi.org/10.1063/5.0078405