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Raman Scattering Study of PbSe Grown on (111) BaF 2 Substrate
- Source :
- Chinese Physics Letters. 17:606-608
- Publication Year :
- 2000
- Publisher :
- IOP Publishing, 2000.
-
Abstract
- PbSe films were grown on (111)-oriented BaF2 substrates by using molecular beam epitaxy. High resolution x-ray diffraction characterization showed good crystalline quality of PbSe films. Both longitudinal optical phonon at 135 cm-1 and transverse optical phonon at 47.6 cm-1 were observed by Raman scattering measurements. The Raman tensor calculation demonstrates that both transverse-optical and longitudinal-optical (LO) phonons in PbSe crystal are Raman active on (111)-oriented surface. Furthermore, 2LO phonon at about 270 cm-1 and polaron at about 800 cm-1 in PbSe, were also observed. The observed Raman frequencies are in good agreement with theoretical calculations using point ion model.
- Subjects :
- Materials science
Phonon
business.industry
General Physics and Astronomy
Substrate (electronics)
Polaron
Molecular physics
Crystal
Condensed Matter::Materials Science
symbols.namesake
X-ray Raman scattering
Condensed Matter::Superconductivity
symbols
Optoelectronics
Raman spectroscopy
business
Raman scattering
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........726e0231f437f36c2e8a0d2d355375b9
- Full Text :
- https://doi.org/10.1088/0256-307x/17/8/022