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Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
- Source :
- IEEE Transactions on Nuclear Science. 69:299-306
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........7274504f9322c5cee6eb100615508856
- Full Text :
- https://doi.org/10.1109/tns.2022.3144204