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Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films
- Source :
- Thin Solid Films. 520:1212-1217
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- Undoped and Ga doped ZnO thin films (1% GZO, 3% GZO and 5% GZO) were grown on c -Al 2 O 3 substrates using the 1, 3 and 5 at. wt.% Ga doped ZnO targets by pulsed laser deposition. X-ray diffraction studies revealed that highly c -axis oriented, single phase, undoped and Ga doped ZnO thin films with wurtzite structure were deposited. Micro-Raman scattering analysis showed that Ga doping introduces defects in the host lattice. The E 2 High mode of ZnO in Ga doped ZnO thin film was observed to shift to higher wavenumber indicating the presence of residual compressive stress. Appearance of the normally Raman inactive B 1 modes (B 1 Low , 2B 1 Low and B 1 High ) due to breaking of local translational symmetry, also indicated that defects were introduced into the host lattice due to Ga incorporation. Band gap of the Ga doped ZnO thin films was observed to shift to higher energy with the increase in doping concentration and is explicated by the Burstein-Moss effect. Electrical resistivity measurements of the undoped and GZO thin films in the temperature range 50 to 300 K revealed the metal to semiconductor transition for 3 and 5% GZO thin films.
- Subjects :
- Materials science
business.industry
Band gap
Doping
Metals and Alloys
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Pulsed laser deposition
symbols.namesake
Semiconductor
Electrical resistivity and conductivity
Materials Chemistry
symbols
Optoelectronics
Thin film
business
Raman spectroscopy
Wurtzite crystal structure
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 520
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........72f196c4004eb47ace2cb5999e44dcec