Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties

We use reflection high‐energy electron diffraction (RHEED) oscillations to study the growth condition dependence of the growth of pseudomorphic InGaAs layers on GaAs, as well as van der Pauw/Hall measurements to evaluate the growth parameter dependence of the electrical properties of InGaAs/AlGaAs high electron mobility transistor structures. We present our conclusions regarding growth conditions for which smooth RHEED oscillations can be obtained, and the parameters for which optimal electrical properties can be reached.