Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications

Authors :: Myounghoon Kwak
Seonghun Kim
Hyunsang Hwang
Donghwa Lee
Changhyuck Sung
Source :: Advanced Electronic Materials. 7:2000881
Publication Year :: 2021
Publisher :: Wiley, 2021.

Subjects :: XNOR gate
Materials science
Artificial neural network
Simple (abstract algebra)
Scalability
Structure (category theory)
Electronic engineering
Resistive switching memory
Binary neural network
Electronic, Optical and Magnetic Materials

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