Study of bulk photovoltaic effect and photovoltaic barrier effect distributions in multicrysta lline silicon

Photoelectric voltage distribution on mc-Si wafers subjected to phosphorus gettering processes was investigated. It was demonstrated, that the measured photoelectric voltage results from bulk photovoltaic effect and photoelectric voltage connected with potential barriers occurring on grains boundaries. It was shown that sample illumination results in reduction of bulk photoelectric effect enabling better visualization and investigation of potential barriers. Relations determining photoelectric voltage distribution on single barrier are given. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)