Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy

Authors :: Hyun Yoon
Ka-Hyun Kim
Dong Suk Kim
Yim Hyun Jo
Namwoo Kim
Ji-Eun Hong
Kwanyong Seo
Source :: Journal of Nanoscience and Nanotechnology. 17:8534-8538
Publication Year :: 2017
Publisher :: American Scientific Publishers, 2017.

Subjects :: 0301 basic medicine
Materials science
Silicon
business.industry
Vapor phase
Biomedical Engineering
chemistry.chemical_element
Bioengineering
Very high frequency
General Chemistry
Plasma
Condensed Matter Physics
Epitaxy
03 medical and health sciences
030104 developmental biology
chemistry
Optoelectronics
General Materials Science
business

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