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A 1.8 V 2 Gb NAND flash memory for mass storage applications
- Source :
- 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.
Details
- Database :
- OpenAIRE
- Journal :
- 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.
- Accession number :
- edsair.doi...........76bf117116afd92f1a7f70fed176c3b2
- Full Text :
- https://doi.org/10.1109/isscc.2003.1234306