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Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

Authors :
A. Gushterov
David Gershoni
Gadi Eisenstein
T. J. Pfau
E. Linder
I. Cestier
Johann Peter Reithmaier
Source :
Applied Physics Letters. 95:243106
Publication Year :
2009
Publisher :
AIP Publishing, 2009.

Abstract

We present site-controlled low density InAs quantum dots grown by molecular beam epitaxy with a template based overgrowth technique allowing enlarged buffer layers upto 55 nm. Growing a seeding layer of InAs quantum dots in etched holes reduces closing of the holes, so that a second layer of InAs quantum dots can be aligned to the holes after a buffer layer overgrowth. Confocal microphotoluminescence measurements show a significant decrease of the low temperature photoluminescence linewidth of the quantum dots to an average value of ∼500 μeV and a minimum width of 460 μeV. This is to be compared to 2 to 4 meV of quantum dots grown on thin buffer layers. This improvement is due to the enlarged distance to residual defects at the overgrown surface.

Details

ISSN :
10773118 and 00036951
Volume :
95
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........76c06ddee32cb55043e7d145c855c32a
Full Text :
https://doi.org/10.1063/1.3265918