Back to Search
Start Over
Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer
- Source :
- Applied Physics Letters. 95:243106
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- We present site-controlled low density InAs quantum dots grown by molecular beam epitaxy with a template based overgrowth technique allowing enlarged buffer layers upto 55 nm. Growing a seeding layer of InAs quantum dots in etched holes reduces closing of the holes, so that a second layer of InAs quantum dots can be aligned to the holes after a buffer layer overgrowth. Confocal microphotoluminescence measurements show a significant decrease of the low temperature photoluminescence linewidth of the quantum dots to an average value of ∼500 μeV and a minimum width of 460 μeV. This is to be compared to 2 to 4 meV of quantum dots grown on thin buffer layers. This improvement is due to the enlarged distance to residual defects at the overgrown surface.
- Subjects :
- Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Quantum point contact
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Condensed Matter::Materials Science
Laser linewidth
chemistry.chemical_compound
chemistry
Quantum dot laser
Quantum dot
Optoelectronics
business
Layer (electronics)
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 95
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........76c06ddee32cb55043e7d145c855c32a
- Full Text :
- https://doi.org/10.1063/1.3265918