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Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky Diodes

Authors :
Kun-Wei Lin
Huey-Ing Chen
Wen-Chau Liu
Hsi Jen Pan
Chik Kai Wang
Source :
Japanese Journal of Applied Physics. 40:6254
Publication Year :
2001
Publisher :
IOP Publishing, 2001.

Abstract

In this work, the hydrogen response characteristics and sensing properties of catalytic Pd metal-oxide-semiconductor (MOS) Schottky diodes based on both GaAs and InP substrates are comparatively investigated. The behaviors of interface Fermi-level pinning causing the apparent difference in the barrier height modulation and the sensitivity are discussed. Furthermore, the effects of temperature and hydrogen concentration in the initial rate of change in current and the response time are examined. In order to study the steady-state reaction kinetics, we also performed the Langmuir analysis to estimate the values of initial heat of adsorption for both devices. Based on the adsorption isotherm of Temkin type, the interface coverage dependent heat of adsorption is responsible for the wide hydrogen sensing range. From the theoretical prediction, both devices have a very low sensitivity limit under atmospheric conditions.

Details

ISSN :
13474065 and 00214922
Volume :
40
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........76cc8bfd6bb5b63cd59be6dcb2ddcbf5
Full Text :
https://doi.org/10.1143/jjap.40.6254