Unique Phenomenon in Degradation of Amorphous In$_{2}$O$_{3}$–Ga$_{2}$O$_{3}$–ZnO Thin-Film Transistors under Dynamic Stress

We investigated the degradation of amorphous In2O3–Ga2O3–ZnO thin-film transistors caused by dynamic AC voltage stress. When AC stress was applied, the transfer curves exhibited an increase in subthreshold swing (S) value. AC stress produced a unique phenomenon in the degradation of the S value, which did not occur under DC voltage stress. Degradation phenomena induced by the transition from positive to negative voltage under AC gate stress suggest that a high electric field introduced by switching to the negative biasing state causes degradation due to the induced high-energy electrons at the interfaces between the electrodes (source and drain) and the channel.