Investigation of local tunneling phenomena in green InGaN‐based LEDs

The tunneling radiative recombination in green InGaN based Light Emitting Diodes (LEDs) has been studied by micro-Electroluminescence measurements. It was found that this recombination was very local, which has lateral size less than 1 μm and spectral peak position around 600 nm. Changes of growth conditions led to a reduction in the concentration of these defects, improving the current-voltage characteristics and slightly enhancing the optical efficiency of green LEDs. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)