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High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications
- Source :
- IEEE Journal of Solid-State Circuits. 56:988-1000
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- By virtue of hardware parallelism, ternary content addressable memory (TCAM) is attractive for low-latency search for packet forwarding in routers for network communications in the upcoming fifth-generation (5G) era. However, the demand for high-density TCAM encounters remarkable costs in silicon area and power consumption. In this work, a 16-kb nonvolatile ternary content addressable memory (nvTCAM) test chip based on resistive memory (ReRAM) is demonstrated in 28-nm process with two techniques to deal with the aforementioned issues. First, the crossbar array with 2-diode-2-ReRAM (2D2R) nvTCAM cell is proposed to realize $>3\times $ improvement in storage density. The back-end-of-line integration of both diode and ReRAM resistor also allows for further 3-D stacking to realize larger storage density. Second, the machine learning concept is exploited to realize intelligent search operation. ${K}$ -means clustering is employed to allocate the entry storage and then the search of destination IP address can be targeted to a specific bank for low power. The evaluation shows >70% reduction in search energy with 2% overhead in silicon area for bank count of four. The test chip also achieves a match delay of 2 ns under nominal operating conditions.
- Subjects :
- Hardware_MEMORYSTRUCTURES
Computer science
business.industry
020208 electrical & electronic engineering
Packet forwarding
02 engineering and technology
Content-addressable memory
Chip
Resistive random-access memory
Reduction (complexity)
Non-volatile memory
0202 electrical engineering, electronic engineering, information engineering
Overhead (computing)
Electrical and Electronic Engineering
Crossbar switch
business
Computer hardware
Subjects
Details
- ISSN :
- 1558173X and 00189200
- Volume :
- 56
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Solid-State Circuits
- Accession number :
- edsair.doi...........78ae0006ac5e459d97ca178c0431c69d