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Maximum Peak Shifting Phenomenon of Turn-off Voltage Ringing for SiC MOSFET
- Source :
- AFRICON
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- This paper focuses on the maximum peak shifting phenomenon observed in drain-source voltage proflle during the turn-off transient of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET). The cause of this phenomenon is identified and discussed. The influence of power loop parasitic resistance and common source inductance on voltage overshoot and ringing is also analyzed. Both large power loop parasitic resistance and common source inductance lead to damping of voltage ringing as well as peak growth. Peak growth becomes a concern under two conditions; prolonged turn-off transient and a high ratio of common source inductance to power loop inductance. Both of these can make the maximum voltage peak grow beyond the safe operation area (SOA) of SiC MOSFET.
- Subjects :
- Materials science
business.industry
020206 networking & telecommunications
02 engineering and technology
Ringing
Inductance
chemistry.chemical_compound
chemistry
MOSFET
Parasitic element
0202 electrical engineering, electronic engineering, information engineering
Silicon carbide
Optoelectronics
020201 artificial intelligence & image processing
Field-effect transistor
Transient (oscillation)
business
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE AFRICON
- Accession number :
- edsair.doi...........78e586a9a7d053846c2065298dcde062