Photoelectrochemical characteristics of slurry-coated CdSeTe films

Studies on slurry painted CdSexTe1-x photoactive films prepared from CdSe and CdTe synthesized by a low temperature wet process are reported. The films on Ti sub- strates, heat treated at 550°C in argon were polycrystalline with the bandgap increasing and room temperature conductivity decreasing with the x value. In poly- sulphide electrolyte, the films with a composition CdSe0.5Te0.5 gave a Voc of 425 mV, Jsc of 8.5 mA cm-2, FF of 0.54 and η of 3.25% at an illumination of 60 mW cm-2.