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Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition
- Source :
- Thin Solid Films. 602:7-12
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The epitaxial growth of a Ge1 − xSnx layer was examined using metal-organic chemical vapor deposition (MOCVD) with two types of Ge precursors; tetra-ethyl-germane (TEGe) and tertiary-butyl-germane (TBGe); and the Sn precursor tri-butyl-vinyl-tin (TBVSn). Though the growth of a Ge1 − xSnx layer on a Ge(001) substrate by MOCVD has been reported, a high-Sn-content Ge1 − xSnx layer and the exploration of MO material combinations for Ge1 − xSnx growth have not been reported. Therefore, the epitaxial growth of a Ge1 − xSnx layer on Ge(001) and Si(001) substrates was examined using these precursors. The Ge1 − xSnx layers were pseudomorphically grown on a Ge(001) substrate, while the Ge1 − xSnx layer with a high degree of strain relaxation was obtained on a Si(001) substrate. Additionally, it was found that the two Ge precursors have different growth temperature ranges, where the TBGe could realize a higher growth rate at a lower growth temperature than the TEGe. The Ge1 − xSnx layers grown using a combination of TBGe and TBVSn exhibited a higher crystalline quality and a smoother surface compared with the Ge1 − xSnx layer prepared by low-temperature molecular beam epitaxy. In this study, a Ge1 − xSnx epitaxial layer with a Sn content as high as 5.1% on a Ge(001) substrate was achieved by MOCVD at 300 °C.
- Subjects :
- 010302 applied physics
Materials science
Inorganic chemistry
Metals and Alloys
Analytical chemistry
chemistry.chemical_element
Germanium
02 engineering and technology
Surfaces and Interfaces
Substrate (electronics)
Chemical vapor deposition
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Crystallinity
chemistry
0103 physical sciences
Materials Chemistry
Metalorganic vapour phase epitaxy
0210 nano-technology
Layer (electronics)
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 602
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........79de85aafa05c1977031fff9e1acaa86
- Full Text :
- https://doi.org/10.1016/j.tsf.2015.10.043