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Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
- Source :
- Applied Surface Science. 479:403-409
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO2 layers. An increase in photocurrent intensity of more than an order magnitude is observed after the hydrogen plasma treatment. The enhancement is attributed to neutralization of dangling bonds at the nanoparticles and to passivation of nonradiative defects in the oxide matrix and at SiGe/matrix interfaces. We find that increasing the partial pressure of hydrogen to pressures where H3+ and H2+ were the dominant ions results in increased photocurrent.
- Subjects :
- Photocurrent
Materials science
Passivation
Hydrogen
Photoconductivity
Dangling bond
General Physics and Astronomy
Nanoparticle
chemistry.chemical_element
02 engineering and technology
Surfaces and Interfaces
General Chemistry
Partial pressure
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Photochemistry
01 natural sciences
0104 chemical sciences
Surfaces, Coatings and Films
Ion
chemistry
0210 nano-technology
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 479
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........79fca0cfdc7af30892b89dfd7f4c80a7