New Perspectives of Defect Physics and Defect Chemistry for Copper Ternary Chalcopyrite Semiconductors

An integrated scheme of defect physics and defect chemistry was developed to study the electronic and electrical properties of CuInSe2. We found that the Madelung energy and relaxation process play significant roles in the defect physics formulation, and some computed data of defect concentrations and the corresponding carrier concentrations using our new scheme are presented.