Back to Search
Start Over
AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage
- Source :
- IEEE Journal of Quantum Electronics. 47:1391-1395
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current.
- Subjects :
- Physics
Avalanche diode
Physics::Instrumentation and Detectors
business.industry
Condensed Matter Physics
Avalanche photodiode
Atomic and Molecular Physics, and Optics
Avalanche breakdown
Impact ionization
Single-photon avalanche diode
Optoelectronics
Breakdown voltage
Zener diode
Electrical and Electronic Engineering
business
Dark current
Subjects
Details
- ISSN :
- 00189197
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Quantum Electronics
- Accession number :
- edsair.doi...........7bd4913e9656aaa6ad9b48148673e136
- Full Text :
- https://doi.org/10.1109/jqe.2011.2165051