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AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Authors :
Chee Hing Tan
Shiyu Xie
Source :
IEEE Journal of Quantum Electronics. 47:1391-1395
Publication Year :
2011
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2011.

Abstract

The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current.

Details

ISSN :
00189197
Volume :
47
Database :
OpenAIRE
Journal :
IEEE Journal of Quantum Electronics
Accession number :
edsair.doi...........7bd4913e9656aaa6ad9b48148673e136
Full Text :
https://doi.org/10.1109/jqe.2011.2165051