Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.