Increase of 1.5 µm luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO2Films with Si Nanocrystallites Fabricated by Laser Ablation

Er-doped SiO2 thin films including Si nanocrystallites were fabricated by laser ablation of Si targets covered with Er thin films in O2 gas and subsequent thermal annealing. Photoluminescence measurements were performed at temperatures from 10 K to 295 K. The optimum condition was found to be an O2 gas pressure range of 40–50 mTorr. We found that the temperature dependence of Er photoluminescence intensity is governed by power density of excitation laser light. Furthermore, Er photoluminescence is more intense at 295 K than that at 10 K at power densities higher than 480 mW/cm2. These results confirm that Er atoms are excited by energy transfer from photo-excited Si nanocrystallites. On the other hand, photoluminescence intensity of Er-doped Si nanoparticles grown in gas phase gradually decreases with increasing temperature.