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RF MEMS Passives on High-Resistivity Silicon Substrates
- Source :
- IEEE Microwave and Wireless Components Letters. 23:632-634
- Publication Year :
- 2013
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2013.
-
Abstract
- Diverse RF passive devices and microelectro- mechanical systems (MEMS) can be monolithically integrated on a high-resistivity silicon (HR-Si) substrate. However, parasitic surface conduction (PSC) at the interface of HR-Si and a silicon dioxide (SiO2) passivation layer reduces the effective substrate resistivity, which in turn results in deterioration of the device quality factor (Q) and non-linearity. Trap-rich HR-Si has been proposed as a low substrate loss alternative, eliminating the problems associated with PSC. However, the full potential of trap-rich HR-Si as a common platform for implementing MEMS passives is not fully explored. In this letter, we evaluate the effectiveness of the trap-rich layer by comparing the frequency response of a number of RF passive devices fabricated on standard and trap-rich HR-Si substrates. In addition, we suggest an electromagnetic (EM) simulation setup that can be used to efficiently and accurately simulate the device performance.
- Subjects :
- Microelectromechanical systems
Frequency response
Materials science
Passivation
Silicon
business.industry
Silicon dioxide
chemistry.chemical_element
Substrate (electronics)
Condensed Matter Physics
chemistry.chemical_compound
chemistry
Q factor
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
business
Layer (electronics)
Subjects
Details
- ISSN :
- 15581764 and 15311309
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- IEEE Microwave and Wireless Components Letters
- Accession number :
- edsair.doi...........7c30158913061d91b2484b50845ef9d6