Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

The new wide-bandgap oxide semiconductor, gallium oxide (Ga 2 O 3 ), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga 2 O 3 is expected to be much larger than those of SiC and GaN due primarily to Ga 2 O 3 's extremely large bandgap of 4.5∼4.9 eV, which will enable Ga 2 O 3 power devices with higher breakdown voltage (V br ) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga 2 O 3 is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga 2 O 3 thin films on single-crystal Ga 2 O 3 substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga 2 O 3 Schottky barrier diodes (SBDs) with epitaxial Si-doped n−-Ga 2 O 3 drift layers grown by HVPE.