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Unravelling additive-based nanocrystal pinning for high efficiency organic-inorganic halide perovskite light-emitting diodes
- Source :
- Nano Energy. 42:157-165
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- Organic-inorganic halide perovskite light emitting diode (PeLED) as a narrow band emitter is an emerging research field. To overcome limited electroluminescence efficiency of PeLEDs, trap-assisted non-radiative recombination in polycrystalline perovskite films should be reduced and the electron-hole balance in the PeLEDs must be improved. In this work, we investigated a practical way to effectively overcome above-mentioned issues by unravelling additive-based nanocrystal pinning (A-NCP) process using the carefully controlled electron transporting organic material solutions diluted in a volatile non-polar solvent. We found that without affecting the intrinsic crystal structure, A-NCP improved the radiative recombination rate by reducing effective defect density at grain boundaries due to the defect healing effect. Moreover, it induced the improved electron-hole balance in the dominantly p-type CH3NH3PbBr3 based PeLEDs, leading to the highest efficiency of 8.79% ever reported to date among organic-inorganic halide perovskite-based green PeLEDs. Therefore, our work gives the effective approaches for efficient PeLEDs from the investigations of the role of A-NCP incorporating a tiny amount of an electron transporting molecule as an additive to increase radiative recombination rate of polycrystalline perovskite films.
- Subjects :
- Materials science
Renewable Energy, Sustainability and the Environment
business.industry
Inorganic chemistry
Halide
02 engineering and technology
Electroluminescence
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
law.invention
Nanocrystal
law
Optoelectronics
General Materials Science
Grain boundary
Spontaneous emission
Crystallite
Electrical and Electronic Engineering
0210 nano-technology
business
Light-emitting diode
Perovskite (structure)
Subjects
Details
- ISSN :
- 22112855
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Nano Energy
- Accession number :
- edsair.doi...........7c6fd0700d0f63867831c9dccbcd433c
- Full Text :
- https://doi.org/10.1016/j.nanoen.2017.10.012