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High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode

Authors :
Xingsheng Wang
Lianbin Zhang
Chengxu Wang
Shuo Du
Qiwen Wu
Yujie Song
Xiangshui Miao
Source :
Applied Physics Letters. 118:223501
Publication Year :
2021
Publisher :
AIP Publishing, 2021.

Abstract

In this Letter, a Ti/HfOx/Pt memristor with a modified Ti electrode created by inserting polydopamine (PDA)/Ag nanoparticles (AgNPs) between the Ti electrode and functional layer is reported. This memristor exhibits a significant improvement in the uniformity of device parameters [including set voltage, reset voltage, high resistance state (HRS) resistances, low resistance state (LRS) resistances, endurance, and retention] compared to conventional memristors. The AgNPs embedded in PDA renders a reduced variability in HRS and LRS resistances from 47% to 7%, and 46% to 11%, respectively. By fitting Poole–Frenkel and Ohmic behavior models, the consistency of the conductive mechanism of the devices before and after modification has been proven, which is further enhanced through variable temperature tests and the simulation of electric field distribution. It is believed that AgNPs play a lightning rod role in guiding the growth of conductive paths; thus, by growing AgNPs in situ on PDA film on the Ti electrode, it reduces the parameter variability.

Details

ISSN :
10773118 and 00036951
Volume :
118
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........7c7dc40a3b12e9777e5852c22734ecf9
Full Text :
https://doi.org/10.1063/5.0049702