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High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode
- Source :
- Applied Physics Letters. 118:223501
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- In this Letter, a Ti/HfOx/Pt memristor with a modified Ti electrode created by inserting polydopamine (PDA)/Ag nanoparticles (AgNPs) between the Ti electrode and functional layer is reported. This memristor exhibits a significant improvement in the uniformity of device parameters [including set voltage, reset voltage, high resistance state (HRS) resistances, low resistance state (LRS) resistances, endurance, and retention] compared to conventional memristors. The AgNPs embedded in PDA renders a reduced variability in HRS and LRS resistances from 47% to 7%, and 46% to 11%, respectively. By fitting Poole–Frenkel and Ohmic behavior models, the consistency of the conductive mechanism of the devices before and after modification has been proven, which is further enhanced through variable temperature tests and the simulation of electric field distribution. It is believed that AgNPs play a lightning rod role in guiding the growth of conductive paths; thus, by growing AgNPs in situ on PDA film on the Ti electrode, it reduces the parameter variability.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Ag nanoparticles
02 engineering and technology
Memristor
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
law
Electric field
0103 physical sciences
Electrode
Optoelectronics
0210 nano-technology
business
Layer (electronics)
Electrical conductor
Ohmic contact
Voltage
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 118
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........7c7dc40a3b12e9777e5852c22734ecf9
- Full Text :
- https://doi.org/10.1063/5.0049702