Sidewall damage inn+‐GaAs quantum wires from reactive ion etching

Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n+‐GaAs wires employing CCl2F2/He as the etch gas. A comparison of the induced sidewall damage is made using room‐temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low‐temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage.