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On the origin of carrier localization in AlInAsSb digital alloy
- Source :
- Chinese Physics B.
- Publication Year :
- 2023
- Publisher :
- IOP Publishing, 2023.
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Abstract
- We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature-dependent S-shape behavior is observed and explained using a thermally activated redistribution model within a Gaussian distribution of localized states. There are two different mechanisms for the origin of the PL intensity quenching for the AlInAsSb digital alloy. The high-temperature activation energy E 1 is positively correlated with the interface thickness, whereas the low-temperature activation energy E 2 is negatively correlated with the interface thickness. A quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) study shows that the interface quality improves as the interface thickness increases. Our results confirm that E 1 comes from carrier trapping at a state in the InSb interface layer, while E 2 originates from the exciton binding energy due to the roughness of the AlAs interface layer.
- Subjects :
- General Physics and Astronomy
Subjects
Details
- ISSN :
- 16741056
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........7ce686e4ba8c58ea99fd93aff550724d