Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET

MLA

King Jet Tseng, and H. L. Yeo. “Modelling Technique Utilizing Modified Sigmoid Functions for Describing Power Transistor Device Capacitances Applied on GaN HEMT and Silicon MOSFET.” 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Mar. 2016. EBSCOhost, https://doi.org/10.1109/apec.2016.7468308.

APA

King Jet Tseng, & H. L. Yeo. (2016). Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET. 2016 IEEE Applied Power Electronics Conference and Exposition (APEC). https://doi.org/10.1109/apec.2016.7468308

Chicago

King Jet Tseng, and H. L. Yeo. 2016. “Modelling Technique Utilizing Modified Sigmoid Functions for Describing Power Transistor Device Capacitances Applied on GaN HEMT and Silicon MOSFET.” 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), March. doi:10.1109/apec.2016.7468308.