Back to Search Start Over

Amorphous indium–gallium–zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model

Authors :
Guan-Yu Lin
Kai-Chung Cheng
Hsiung-Hsing Lu
Chia-Yu Chen
Shou-Wei Fang
He-Ting Tsai
Yu-Hsin Lin
Yu-Hung Chen
Tsung-Hsiang Shih
Chih-Yuan Lin
Chin-Wei Yang
Hsin-Hung Li
Lung-Pao Hsin
Chien-Tao Chen
Chun-Ming Yang
Jen-Yu Lee
Source :
Solid-State Electronics. 73:74-77
Publication Year :
2012
Publisher :
Elsevier BV, 2012.

Abstract

We have successfully fabricated large sized amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than ±0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model.

Details

ISSN :
00381101
Volume :
73
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........7d6a15563e219806b553ca84c94173be